Heterostructures Ga$_{x}$In$_{1-x}$As$_{y}$Bi$_{z}$Sb$_{1-y-z}$/InSb for photodetector devices

Isoparametric heterostructures Ga$_{x}$In$_{1-x}$As$_{y}$Bi$_{z}$Sb$_{1-y-z}$/InSb for photodetectors operating in a 6- to 12-$\mu$m wavelength interval have been manufactured by the method of floating-zone recrystallization with temperature gradient. The introduction of bismuth into GaInAsSb solid solution provides a decrease in bandgap width $E_g$, the corresponding increase in the working wavelength interval up to 12 $\mu$m, and a shift in the photosensitivity maximum to longer wavelengths.