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Heterobarrier varactors with nonuniformly doped modulation layers
N. A. Maleeva, M. A. Bobrova, A. G. Kuz'menkovb, A. P. Vasil'evb, M. M. Kulaginaa, Yu. A. Gusevaa, S. A. Blokhina, V. M. Ustinovbc a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c Saint Petersburg Electrotechnical University "LETI"
Abstract:
Optimum shape of the capacitance–voltage ($C$–$V$) characteristic is a critical parameter determining the efficiency of frequency multiplication in heterobarrier varactors (HBVs) operating in the millimeter and submillimeter frequency ranges. A numerical model for calculating the $C$–$V$ characteristics and leakage currents of HBV heterostructures with arbitrary composition and doping profiles has been verified on the basis of published and original experimental data. A specially designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded by nonuniformly doped $n$-InGaAs modulation layers has been grown by molecular beam epitaxy on InP substrate. Prototype HBVs manufactured using the proposed heterostructure demonstrated a nearly cosine shape of the $C$–$V$ curve at bias voltages up to 2 V, increased overlap capacitance, and low leakage currents.
Keywords:
heterobarrier varactor, capacitance–voltage characteristic, epitaxy.
Received: 03.07.2019 Revised: 03.07.2019 Accepted: 08.07.2019
Citation:
N. A. Maleev, M. A. Bobrov, A. G. Kuz'menkov, A. P. Vasil'ev, M. M. Kulagina, Yu. A. Guseva, S. A. Blokhin, V. M. Ustinov, “Heterobarrier varactors with nonuniformly doped modulation layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 51–54; Tech. Phys. Lett., 45:10 (2019), 1063–1066
Linking options:
https://www.mathnet.ru/eng/pjtf5298 https://www.mathnet.ru/eng/pjtf/v45/i20/p51
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Abstract page: | 44 | Full-text PDF : | 9 |
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