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The influence of the voltage rise time on transient processes during current overload in stabilized second-generation HTSC wires
V. A. Malginov P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
Abstract:
The effect of spontaneous reverse transition of the stable HTSC tape from the normal to the resistive state with rapid input voltage and current overload at alternating current is detected. For the first time it is established that during the occurrence of this effect and at the thickness of the stabilizer above 13 $\mu$m, the main heat releases occur in the copper stabilizer and are effectively discharged into the refrigerant, which significantly reduces the heating of the HTSC layer. In this case, the resistance of the secondary resistive state decreases and the time of its existence increases. These data make it possible to use the detected effect to increase the time of current limitation and reliability of HTSC current limiters.
Keywords:
HTSC tape, layered structure, stabilizing layer, voltage jump, resistive state.
Received: 02.04.2019 Revised: 22.07.2019 Accepted: 23.07.2019
Citation:
V. A. Malginov, “The influence of the voltage rise time on transient processes during current overload in stabilized second-generation HTSC wires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:22 (2019), 7–11; Tech. Phys. Lett., 45:11 (2019), 1122–1126
Linking options:
https://www.mathnet.ru/eng/pjtf5259 https://www.mathnet.ru/eng/pjtf/v45/i22/p7
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Abstract page: | 48 | Full-text PDF : | 22 |
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