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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 22, Pages 3–6
DOI: https://doi.org/10.21883/PJTF.2019.22.48639.17951 (Mi pjtf5258) 		 
This article is cited in 2 scientific papers (total in 2 papers)

The influence of a flow of low-temperature nitrogen plasma on the morphology, electric properties, and UV photoconductivity of ZnO films on sapphire

M. Kh. Gadzhieva, A. S. Tyuftyaeva, A. È. Muslimovb, V. M. Kanevskiib, A. M. Ismailovc, V. A. Babaevc

a Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow
b Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics, Russian Academy of Sciences, Moscow, Russia
c Daghestan State University, Makhachkala
Full-text PDF (410 kB) Citations (2)
DOI: https://doi.org/10.21883/PJTF.2019.22.48639.17951
Abstract: We have studied the influence of a flow of high-enthalpy nitrogen plasma generated by a dc plasmatron on the morphology, electrical properties, and UV photoconductivity of ZnO films on sapphire substrates. It was found that the resistance of nitrogen-plasma-treated ZnO films increased (by a maximum factor of 10$^4$) and the processed films exhibited clearly pronounced response to UV irradiation. The UV responsivity of current and the current pulse contrast at 6 V were on a level of 3.6 $\times$ 10$^{-5}$ A/W and 16, respectively. The photocurrent pulse rise and decay times were $\sim$0.45 s.
Keywords: zinc oxide, low temperature plasma, plasmatron.
Funding agency Grant number
Russian Foundation for Basic Research 18-29-24203мк
20-08-00598а
This work was supported by the Ministry of Science and Higher Education of the Russian Federation in the framework of investigations in the framework of a state order to the Joint Institute for High Temperatures (in the part of film nitriding) and for the Crystallography and Photonics Research Center (in the part of film characterization), as well as by the Russian Foundation for Basic Research, project nos. 18-29-24203mk and 20-08-00598a.
Received: 27.06.2019
Revised: 22.07.2019
Accepted: 22.07.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 11, Pages 1118–1121
DOI: https://doi.org/10.1134/S106378501911021X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. Kh. Gadzhiev, A. S. Tyuftyaev, A. È. Muslimov, V. M. Kanevskii, A. M. Ismailov, V. A. Babaev, “The influence of a flow of low-temperature nitrogen plasma on the morphology, electric properties, and UV photoconductivity of ZnO films on sapphire”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:22 (2019), 3–6; Tech. Phys. Lett., 45:11 (2019), 1118–1121
Citation in format AMSBIB
\Bibitem{GadTyuMus19}
\by M.~Kh.~Gadzhiev, A.~S.~Tyuftyaev, A.~\`E.~Muslimov, V.~M.~Kanevskii, A.~M.~Ismailov, V.~A.~Babaev
\paper The influence of a flow of low-temperature nitrogen plasma on the morphology, electric properties, and UV photoconductivity of ZnO films on sapphire
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 22
\pages 3--6
\mathnet{http://mi.mathnet.ru/pjtf5258}
\crossref{https://doi.org/10.21883/PJTF.2019.22.48639.17951}
\elib{https://elibrary.ru/item.asp?id=41848474}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 11
\pages 1118--1121
\crossref{https://doi.org/10.1134/S106378501911021X}
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