Specific features of current–voltage characteristics of field-effect transistors with active layers based on composite films of semiconductor polymers with nanoparticles of inorganic perovskites

Current–voltage characteristics of composite field-effect transistors with active layers based on inorganic perovskites, nanocrystals of cesium halides CsPbBr$_{3}$, embedded into the matrix of a semiconductor polymer PFO (PFO:CsPbBr$_{3}$) have been analyzed. An increase in current gain $\beta$ in current–voltage characteristics of structures of this kind with increasing negative gate voltage was found and considered. It was shown that, if there is additional injection of minority carriers from electrodes into the transistor channel, composite light-emitting field-effect transistors with improved characteristics can be developed.