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This article is cited in 9 scientific papers (total in 9 papers)
Terahertz emission from a monolayer tungsten diselenide surface
A. V. Gorbatova, D. I. Khusyainov, A. M. Buryakov MIREA — Russian Technological University, Moscow
Abstract:
Parameters of terahertz (THz) emission in two-dimensional (2D) tungsten diselenide (WSe$_{2}$) film grown by chemical vapor deposition from the gas phase have been studied for the first time. The main mechanism of THz radiation generation in this system is established. Dependence of the THz signal amplitude on azimuthal angle in a 2D WSe$_2$ film has been studied. The distribution of the electric field of laser pumping in the WSe$_{2}$/SiO$_2$/Si structure has been calculated as dependent on the thickness of silicon dioxide layer. The choice of optimum structure geometry for effective generation of THz radiation by a WSe$_{2}$ monolayer is theoretically substantiated.
Keywords:
two-dimensional semiconductors, transition metal dichalcogenides, tungsten diselenide, WSe$_2$, terahertz emission, optical rectification.
Received: 12.09.2019 Revised: 12.09.2019 Accepted: 20.09.2019
Citation:
A. V. Gorbatova, D. I. Khusyainov, A. M. Buryakov, “Terahertz emission from a monolayer tungsten diselenide surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019), 44–47; Tech. Phys. Lett., 45:12 (2019), 1262–1265
Linking options:
https://www.mathnet.ru/eng/pjtf5242 https://www.mathnet.ru/eng/pjtf/v45/i24/p44
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