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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 24, Pages 29–32
DOI: https://doi.org/10.21883/PJTF.2019.24.48799.18024 (Mi pjtf5238) 		 
This article is cited in 2 scientific papers (total in 2 papers)

The influence of fin shape on the amplitude of random telegraph noise in the subthreshold regime of a junctionless FinFET

M. M. Khalilloeva, B. O. Jabbarovaa, A. A. Nasirovb

a Urgench State University, Urgench, Uzbekistan
b National University of Uzbekistan named after Mirzo Ulugbek, Tashkent
Full-text PDF (107 kB) Citations (2)
DOI: https://doi.org/10.21883/PJTF.2019.24.48799.18024
Abstract: The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator technology has been numerically simulated. It is established that the RTN amplitude in the subthreshold region of gate voltages for a FinFET with a trapezoidal cross section of channel is significantly lower than that for the transistor with rectangular cross section of a channel. In addition, under the same conditions, the RTN amplitude at the threshold gate voltage in a junctionless FinFET is significantly lower than that in planar fully depleted and in usual FinFET.
Keywords: random telegraph noise, junctionless FinFET, interfacial trap charge, drain current density.
Received: 03.09.2019
Revised: 03.09.2019
Accepted: 17.09.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 12, Pages 1245–1248
DOI: https://doi.org/10.1134/S1063785019120216
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. M. Khalilloev, B. O. Jabbarova, A. A. Nasirov, “The influence of fin shape on the amplitude of random telegraph noise in the subthreshold regime of a junctionless FinFET”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019), 29–32; Tech. Phys. Lett., 45:12 (2019), 1245–1248
Citation in format AMSBIB
\Bibitem{KhaJabNas19}
\by M.~M.~Khalilloev, B.~O.~Jabbarova, A.~A.~Nasirov
\paper The influence of fin shape on the amplitude of random telegraph noise in the subthreshold regime of a junctionless FinFET
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 24
\pages 29--32
\mathnet{http://mi.mathnet.ru/pjtf5238}
\crossref{https://doi.org/10.21883/PJTF.2019.24.48799.18024}
\elib{https://elibrary.ru/item.asp?id=41848516}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 12
\pages 1245--1248
\crossref{https://doi.org/10.1134/S1063785019120216}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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