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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 24, Pages 21–24
DOI: https://doi.org/10.21883/PJTF.2019.24.48797.18006 (Mi pjtf5236) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Ion-beam deposition of thin AlN films on Al$_{2}$O$_{3}$ substrate

L. S. Luninab, O. V. Devitskyac, I. A. Sysoevc, A. S. Pashchenkoab, I. V. Kasyanovc, D. A. Nikulinc, V. A. Irkhaa

a Federal Research Center, Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
b Platov South Russian State Polytechnic University, Novocherkassk, Rostov oblast, Russia
c North-Caucasus Federal University, Stavropol, Russia
Full-text PDF (655 kB) Citations (4)
DOI: https://doi.org/10.21883/PJTF.2019.24.48797.18006
Abstract: Thin aluminum nitride (AlN) films on sapphire (Al$_{2}$O$_{3}$) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture composition, ion beam energy, and substrate temperature) on the morphology, structure, and optical properties of obtained thin AlN films on sapphire.
Keywords: ion-beam deposition, wide-gap semiconductors, aluminum nitride, gallium nitride, sapphire.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 01201354240
This work was performed in the framework of state orders to the Federal Research Center Southern Scientific Center of the Russian Academy of Sciences for 2019, projects nos. 01201354240 and AAAA-A19-119040390081-2.
Received: 31.07.2019
Revised: 31.07.2019
Accepted: 17.09.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 12, Pages 1237–1240
DOI: https://doi.org/10.1134/S106378501912023X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. S. Lunin, O. V. Devitsky, I. A. Sysoev, A. S. Pashchenko, I. V. Kasyanov, D. A. Nikulin, V. A. Irkha, “Ion-beam deposition of thin AlN films on Al$_{2}$O$_{3}$ substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019), 21–24; Tech. Phys. Lett., 45:12 (2019), 1237–1240
Citation in format AMSBIB
\Bibitem{LunDevSys19}
\by L.~S.~Lunin, O.~V.~Devitsky, I.~A.~Sysoev, A.~S.~Pashchenko, I.~V.~Kasyanov, D.~A.~Nikulin, V.~A.~Irkha
\paper Ion-beam deposition of thin AlN films on Al$_{2}$O$_{3}$ substrate
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 24
\pages 21--24
\mathnet{http://mi.mathnet.ru/pjtf5236}
\crossref{https://doi.org/10.21883/PJTF.2019.24.48797.18006}
\elib{https://elibrary.ru/item.asp?id=41848513}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 12
\pages 1237--1240
\crossref{https://doi.org/10.1134/S106378501912023X}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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