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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 2, Pages 15–18
DOI: https://doi.org/10.21883/PJTF.2020.02.48945.18046
(Mi pjtf5207)
 

This article is cited in 2 scientific papers (total in 2 papers)

Structure and ferroelectric properties of thin heteroepitaxial NaNbO$_{3}$ films obtained by RF cathode sputtering

A. V. Pavlenkoab, D. V. Stryukova, N. V. Ter-Oganessianb

a Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
b Research Institute of Physics, Southern Federal University
Full-text PDF (115 kB) Citations (2)
Abstract: Thin films of sodium niobate (NaNbO3) on a MgO(001) substrate with a predeposited SrRuO$_3$ layer were obtained for the first time by the method of RF cathode sputtering in an oxygen atmosphere. X-ray diffraction data showed the obtained films to be single-phase and single-crystalline. The parameters of the unit cells of NaNbO$_3$ and SrRuO$_3$ layers in the tetragonal approximation were found to be $c_{\mathrm{NaNbO}_3}$ = 0.3940 (1) nm, $a_{\mathrm{NaNbO}_3}$ = 0.389 (1) nm; $c_{\mathrm{SrRuO_3}}$ = 0.4004 (1) nm, and $a_{\mathrm{SrRuO}_3}$ = 0.392 (3) nm. Misfit strain of the unit cell of NaNbO$_3$ amounted to $\varepsilon_{33}$ = 0.007 and $\varepsilon_{11}$ = 0.002. The results of dielectric and piezoelectric measurements showed that the films occurred in a ferroelectric state.
Keywords: thin films, sodium niobate, dielectric characteristics, unit cell deformation.
Funding agency Grant number
Russian Science Foundation 19-12-00205
This study was supported in part by the Russian Science Foundation, project no. 19-12-00205.
Received: 23.09.2019
Revised: 09.10.2019
Accepted: 14.10.2019
English version:
Technical Physics Letters, 2020, Volume 46, Issue 1, Pages 62–65
DOI: https://doi.org/10.1134/S1063785020010289
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Pavlenko, D. V. Stryukov, N. V. Ter-Oganessian, “Structure and ferroelectric properties of thin heteroepitaxial NaNbO$_{3}$ films obtained by RF cathode sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 15–18; Tech. Phys. Lett., 46:1 (2020), 62–65
Citation in format AMSBIB
\Bibitem{PavStrTer20}
\by A.~V.~Pavlenko, D.~V.~Stryukov, N.~V.~Ter-Oganessian
\paper Structure and ferroelectric properties of thin heteroepitaxial NaNbO$_{3}$ films obtained by RF cathode sputtering
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 2
\pages 15--18
\mathnet{http://mi.mathnet.ru/pjtf5207}
\crossref{https://doi.org/10.21883/PJTF.2020.02.48945.18046}
\elib{https://elibrary.ru/item.asp?id=42776859}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 1
\pages 62--65
\crossref{https://doi.org/10.1134/S1063785020010289}
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    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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