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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 6, Pages 3–6
DOI: https://doi.org/10.21883/PJTF.2020.06.49155.18130 (Mi pjtf5150) 		 
This article is cited in 1 scientific paper (total in 1 paper)

The influence of interfacial effects on the electron spectrum of GaAs/AlGaAs structures used for the creation of MID-IR photodetectors

V. S. Krivoboka, D. A. Pashkeevab, D. A. Litvinova, L. N. Grigor'evaac, S. A. Kolosova

a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b ORION Research and Production Enterprise, Moscow, Russia
c Lomonosov Moscow State University
Full-text PDF (281 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2020.06.49155.18130
Abstract: It is shown that transient processes arising in the growth chamber of a molecular beam epitaxy (MBE) system influence the structure of interfaces and electron spectrum of quantum wells in GaAs/Al$_{x}$Ga$_{1-x}$As heterostructures used for the creation of photodetectors (PDs) operating in the mid-IR range. These processes lead to a low-frequency shift of the PD operating transition, appearance of interband transition lines (forbidden by selection rules) in the absorption spectrum, and decrease in the energy shift between quantum-confinement levels formed by light and heavy holes. These effects provide a simple approach to contactless evaluation of the quality of interfaces in GaAs/Al$_{x}$Ga$_{1-x}$As heterostructures for PDs.
Keywords: IR detector, heterostructure, quantum well, low temperature photoluminescence.
Funding agency Grant number
Russian Science Foundation 19-79-30086
This work was supported in part by the Russian Science Foundation, project no. 19-79-30086.
Received: 22.11.2019
Revised: 22.11.2019
Accepted: 09.12.2019
English version:
Technical Physics Letters, 2020, Volume 46, Issue 3, Pages 256–259
DOI: https://doi.org/10.1134/S1063785020030256
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. S. Krivobok, D. A. Pashkeev, D. A. Litvinov, L. N. Grigor'eva, S. A. Kolosov, “The influence of interfacial effects on the electron spectrum of GaAs/AlGaAs structures used for the creation of MID-IR photodetectors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 3–6; Tech. Phys. Lett., 46:3 (2020), 256–259
Citation in format AMSBIB
\Bibitem{KriPasLit20}
\by V.~S.~Krivobok, D.~A.~Pashkeev, D.~A.~Litvinov, L.~N.~Grigor'eva, S.~A.~Kolosov
\paper The influence of interfacial effects on the electron spectrum of GaAs/AlGaAs structures used for the creation of MID-IR photodetectors
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 6
\pages 3--6
\mathnet{http://mi.mathnet.ru/pjtf5150}
\crossref{https://doi.org/10.21883/PJTF.2020.06.49155.18130}
\elib{https://elibrary.ru/item.asp?id=42776945}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 3
\pages 256--259
\crossref{https://doi.org/10.1134/S1063785020030256}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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