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Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering
V. N. Bessolova, N. D. Gruzinovb, M. E. Kompana, E. V. Konenkovaa, V. N. Panteleeva, S. N. Rodina, M. P. Scheglova a Ioffe Institute, St. Petersburg
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
Abstract:
Epitaxial aluminum nitride (AlN) layers on Si(111) substrates have been grown by sequential application of several techniques including reactive magnetron sputter deposition to a thickness of 20 nm, metalorganic vapor-phase epitaxy (MOVPE) to a total thickness of 450 nm, and hydride vapor-phase epitaxy (HVPE) to a final thickness of 2 $\mu$m. Synthesis of AlN layers by this combined method provides a significant decrease in the residual strain and suppresses the formation of cracks in the epilayer.
Keywords:
aluminum nitride, silicon, vapor phase epitaxy.
Received: 22.01.2020 Revised: 22.01.2020 Accepted: 27.01.2020
Citation:
V. N. Bessolov, N. D. Gruzinov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. N. Rodin, M. P. Scheglov, “Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020), 29–31; Tech. Phys. Lett., 46:4 (2020), 382–384
Linking options:
https://www.mathnet.ru/eng/pjtf5130 https://www.mathnet.ru/eng/pjtf/v46/i8/p29
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Abstract page: | 36 | Full-text PDF : | 14 |
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