Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 8, Pages 29–31
DOI: https://doi.org/10.21883/PJTF.2020.08.49305.18215 (Mi pjtf5130) 		 
Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering

V. N. Bessolova, N. D. Gruzinovb, M. E. Kompana, E. V. Konenkovaa, V. N. Panteleeva, S. N. Rodina, M. P. Scheglova

a Ioffe Institute, St. Petersburg
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
Full-text PDF (225 kB)
DOI: https://doi.org/10.21883/PJTF.2020.08.49305.18215
Abstract: Epitaxial aluminum nitride (AlN) layers on Si(111) substrates have been grown by sequential application of several techniques including reactive magnetron sputter deposition to a thickness of 20 nm, metalorganic vapor-phase epitaxy (MOVPE) to a total thickness of 450 nm, and hydride vapor-phase epitaxy (HVPE) to a final thickness of 2 $\mu$m. Synthesis of AlN layers by this combined method provides a significant decrease in the residual strain and suppresses the formation of cracks in the epilayer.
Keywords: aluminum nitride, silicon, vapor phase epitaxy.
Funding agency Grant number
Russian Foundation for Basic Research 20-08-00096
The investigations of V.N. Bessolov, E.V. Konenkova, and V.N. Panteleev were supported in part by the Russian Foundation for Basic Research, project no. 20-08-00096.
Received: 22.01.2020
Revised: 22.01.2020
Accepted: 27.01.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 4, Pages 382–384
DOI: https://doi.org/10.1134/S1063785020040185
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. N. Bessolov, N. D. Gruzinov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. N. Rodin, M. P. Scheglov, “Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020), 29–31; Tech. Phys. Lett., 46:4 (2020), 382–384
Citation in format AMSBIB
\Bibitem{BesGruKom20}
\by V.~N.~Bessolov, N.~D.~Gruzinov, M.~E.~Kompan, E.~V.~Konenkova, V.~N.~Panteleev, S.~N.~Rodin, M.~P.~Scheglov
\paper Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 8
\pages 29--31
\mathnet{http://mi.mathnet.ru/pjtf5130}
\crossref{https://doi.org/10.21883/PJTF.2020.08.49305.18215}
\elib{https://elibrary.ru/item.asp?id=43800662}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 4
\pages 382--384
\crossref{https://doi.org/10.1134/S1063785020040185}
Linking options:
  • https://www.mathnet.ru/eng/pjtf5130
  • https://www.mathnet.ru/eng/pjtf/v46/i8/p29
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024