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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 8, Pages 29–31
DOI: https://doi.org/10.21883/PJTF.2020.08.49305.18215 (Mi pjtf5130) 		 
Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering

V. N. Bessolova, N. D. Gruzinovb, M. E. Kompana, E. V. Konenkovaa, V. N. Panteleeva, S. N. Rodina, M. P. Scheglova

a Ioffe Institute, St. Petersburg
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
Full-text PDF (225 kB)
DOI: https://doi.org/10.21883/PJTF.2020.08.49305.18215
Abstract: Epitaxial aluminum nitride (AlN) layers on Si(111) substrates have been grown by sequential application of several techniques including reactive magnetron sputter deposition to a thickness of 20 nm, metalorganic vapor-phase epitaxy (MOVPE) to a total thickness of 450 nm, and hydride vapor-phase epitaxy (HVPE) to a final thickness of 2 $\mu$m. Synthesis of AlN layers by this combined method provides a significant decrease in the residual strain and suppresses the formation of cracks in the epilayer.
Keywords: aluminum nitride, silicon, vapor phase epitaxy.
Funding agency Grant number
Russian Foundation for Basic Research 20-08-00096
The investigations of V.N. Bessolov, E.V. Konenkova, and V.N. Panteleev were supported in part by the Russian Foundation for Basic Research, project no. 20-08-00096.
Received: 22.01.2020
Revised: 22.01.2020
Accepted: 27.01.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 4, Pages 382–384
DOI: https://doi.org/10.1134/S1063785020040185
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. N. Bessolov, N. D. Gruzinov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. N. Rodin, M. P. Scheglov, “Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020), 29–31; Tech. Phys. Lett., 46:4 (2020), 382–384
Citation in format AMSBIB
\Bibitem{BesGruKom20}
\by V.~N.~Bessolov, N.~D.~Gruzinov, M.~E.~Kompan, E.~V.~Konenkova, V.~N.~Panteleev, S.~N.~Rodin, M.~P.~Scheglov
\paper Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 8
\pages 29--31
\mathnet{http://mi.mathnet.ru/pjtf5130}
\crossref{https://doi.org/10.21883/PJTF.2020.08.49305.18215}
\elib{https://elibrary.ru/item.asp?id=43800662}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 4
\pages 382--384
\crossref{https://doi.org/10.1134/S1063785020040185}
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