Growth of thin graphite films on a dielectric substrate using heteroepitaxial synthesis

A technique for growing thin graphite films on a dielectric substrate by annealing the Al$_{2}$O$_{3}$(0001)/Ni(111)/$ta$-C structure has been optimized. This technique is based on catalytic decomposition of hydrocarbons on the surface of a single-crystal catalyst metal film on a dielectric substrate and subsequent diffusion and crystallization of carbon between the metal film and the substrate. A thin graphite film with a low density of crystal-structure defects is obtained on the dielectric substrate after chemical etching of the metal film.