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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 10, Pages 34–37
DOI: https://doi.org/10.21883/PJTF.2020.10.49430.18060 (Mi pjtf5104) 		 
This article is cited in 2 scientific papers (total in 2 papers)

The influence of a single charged interface trap on the subthreshold drain current in FinFETs with different fin shapes

A. E. Abdikarimov

Urgench State University
Full-text PDF (98 kB) Citations (2)
DOI: https://doi.org/10.21883/PJTF.2020.10.49430.18060
Abstract: The influence of the channel shape in a finned (vertical) field-effect transistor (FinFET) on the amplitude of random telegraph noise (RTN) induced by single interface trapped charge has been simulated for the transistors with rectangular and trapezoidal fin cross sections. It is established that, in a subthreshold region of gate voltages, a single charge trapped at the fin top induces RTN of lower amplitude in the case of a trapezoidal cross sections as compared to that in a transistor with rectangular cross sections. However, a single charge built in the middle of the fin side wall induces RTN of significantly higher amplitude in case of the fin with trapezoidal cross section.
Keywords: random telegraph noise, FinFET, interface trapped charge, drain current density.
Received: 03.10.2019
Revised: 02.03.2020
Accepted: 02.03.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 5, Pages 494–496
DOI: https://doi.org/10.1134/S106378502005017X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. E. Abdikarimov, “The influence of a single charged interface trap on the subthreshold drain current in FinFETs with different fin shapes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020), 34–37; Tech. Phys. Lett., 46:5 (2020), 494–496
Citation in format AMSBIB
\Bibitem{Abd20}
\by A.~E.~Abdikarimov
\paper The influence of a single charged interface trap on the subthreshold drain current in FinFETs with different fin shapes
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 10
\pages 34--37
\mathnet{http://mi.mathnet.ru/pjtf5104}
\crossref{https://doi.org/10.21883/PJTF.2020.10.49430.18060}
\elib{https://elibrary.ru/item.asp?id=43800703}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 5
\pages 494--496
\crossref{https://doi.org/10.1134/S106378502005017X}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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