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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 11, Pages 51–54
DOI: https://doi.org/10.21883/PJTF.2020.11.49501.17964 (Mi pjtf5094) 		 
High-rate growth of bicrystal ZnO films on a rhombohedral sapphire plane

A. È. Muslimova, A. M. Ismailovb, A. Sh. Asvarovac, V. A. Babaevb, V. M. Kanevskiia

a Institute of Cristallography Russian Academy of Sciences, Moscow
b Daghestan State University, Makhachkala
c Daghestan Institute of Physics after Amirkhanov
Full-text PDF (588 kB)
DOI: https://doi.org/10.21883/PJTF.2020.11.49501.17964
Abstract: A method for growing bicrystal ZnO films using the specific features of magnetron sputtering and the orienting effect of a rhombohedral sapphire plane is proposed. It is shown that the successive application of two deposition regimes ($\sim$2 and $\sim$16 nm/s) leads to the formation of a bicrystal film with the (110)-oriented lower sublayer and the (002)-oriented upper sublayer. Recrystallization annealing at 1000$^\circ$C for 10 h does not affect the upper (002)-oriented layer and induces stress relaxation in the lower (110)-oriented layer.
Keywords: zinc oxide, diffraction, bicrystal films.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation
Russian Foundation for Basic Research 18-29-12099 мк
This study was supported by the Ministry of Science and Higher Education of the Russian Federation within the framework of state orders for the Crystallography and Photonics Federal Scientific Research Center of the Russian Academy of Sciences in the part concerning the film growth and the Dagestan Federal Research Center of the Russian Academy of Sciences in the part concerning the structural analysis of the films, as well as the Russian Foundation for Basic Research, project no. 18-29-12099 mk.
Received: 05.07.2019
Revised: 17.03.2020
Accepted: 17.03.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 6, Pages 568–571
DOI: https://doi.org/10.1134/S1063785020060085
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. È. Muslimov, A. M. Ismailov, A. Sh. Asvarov, V. A. Babaev, V. M. Kanevskii, “High-rate growth of bicrystal ZnO films on a rhombohedral sapphire plane”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 51–54; Tech. Phys. Lett., 46:6 (2020), 568–571
Citation in format AMSBIB
\Bibitem{MusIsmAsv20}
\by A.~\`E.~Muslimov, A.~M.~Ismailov, A.~Sh.~Asvarov, V.~A.~Babaev, V.~M.~Kanevskii
\paper High-rate growth of bicrystal ZnO films on a rhombohedral sapphire plane
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 11
\pages 51--54
\mathnet{http://mi.mathnet.ru/pjtf5094}
\crossref{https://doi.org/10.21883/PJTF.2020.11.49501.17964}
\elib{https://elibrary.ru/item.asp?id=43800722}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 6
\pages 568--571
\crossref{https://doi.org/10.1134/S1063785020060085}
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