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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 13, Pages 43–46
DOI: https://doi.org/10.21883/PJTF.2020.13.49591.18106 (Mi pjtf5064) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Spin accumulation in the Fe$_{3}$Si/$n$-Si epitaxial structure and related electric bias effect

A. S. Tarasovab, A. V. Lukyanenkoab, I. A. Bondarevab, I. A. Yakovleva, S. N. Varnakova, S. G. Ovchinnikovab, N. V. Volkovab

a L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
b Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk
Full-text PDF (980 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2020.13.49591.18106
Abstract: The electrical injection of a spin-polarized current into silicon was demonstrated in the Fe$_{3}$Si/$n$-Si epitaxial structure. The spin accumulation effect was studied by measuring local and nonlocal voltage signals in a specially prepared 4-terminal device. The detected effect of electrical bias on the spin signal is discussed and compared with other results reported for ferromagnet/semiconductor structures.
Keywords: iron silicide, ferromagnet/semiconductor structure, Hanle effect, spin accumulation, electrical spin injection.
Funding agency Grant number
Russian Foundation for Basic Research 18-42-243022
Ministry of Education and Science of the Russian Federation 075-15-2019-1886
This study was supported by the Russian Foundation for Basic Research, the Government of Krasnoyarsk krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities (project no. 18-42-243022), and a Grant of the Government of the Russian Federation for Creation of World Level Laboratories (agreement no. 075-15-2019-1886).
Received: 08.11.2019
Revised: 19.02.2020
Accepted: 06.04.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 7, Pages 665–668
DOI: https://doi.org/10.1134/S1063785020070135
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Tarasov, A. V. Lukyanenko, I. A. Bondarev, I. A. Yakovlev, S. N. Varnakov, S. G. Ovchinnikov, N. V. Volkov, “Spin accumulation in the Fe$_{3}$Si/$n$-Si epitaxial structure and related electric bias effect”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020), 43–46; Tech. Phys. Lett., 46:7 (2020), 665–668
Citation in format AMSBIB
\Bibitem{TarLukBon20}
\by A.~S.~Tarasov, A.~V.~Lukyanenko, I.~A.~Bondarev, I.~A.~Yakovlev, S.~N.~Varnakov, S.~G.~Ovchinnikov, N.~V.~Volkov
\paper Spin accumulation in the Fe$_{3}$Si/$n$-Si epitaxial structure and related electric bias effect
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 13
\pages 43--46
\mathnet{http://mi.mathnet.ru/pjtf5064}
\crossref{https://doi.org/10.21883/PJTF.2020.13.49591.18106}
\elib{https://elibrary.ru/item.asp?id=43870314}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 7
\pages 665--668
\crossref{https://doi.org/10.1134/S1063785020070135}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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