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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 14, Pages 33–35
DOI: https://doi.org/10.21883/PJTF.2020.14.49664.18233 (Mi pjtf5048) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Formation of pores in thin germanium films under implantation by Ge$^{+}$ ions

N. M. Lyadova, T. P. Gavrilovaa, S. M. Khantimerova, V. V. Bazarova, N. M. Suleimanova, V. A. Shustova, V. I. Nuzhdina, I. V. Yanilkinb, A. I. Gumarovb, I. A. Faizrakhmanova, L. R. Tagirovab

a Zavoisky Physical Technical Institute, Kazan Scientific Center of the Russian Academy of Sciences
b Institute of Physics, Kazan Federal University
Full-text PDF (807 kB) Citations (2)
DOI: https://doi.org/10.21883/PJTF.2020.14.49664.18233
Abstract: The results of a study of the morphology of the nanostructured by ion implantation germanium films are presented. The film samples were grown using the magnetron sputtering method in an ultrahigh vacuum and then were irradiated with Ge$^{+}$ ions of 40 keV energy in the fluence range of (1.8–8) $\times$ 10$^{16}$ ion/cm$^2$. Using the scanning electron microscopy it was found that in the implanted germanium volume the vacancy complexes with a diameter of 50–150 nm gradually form and come to the surface upon reaching a certain implantation fluence, forming a developed relief of the irradiated films.
Keywords: nanostructured germanium, ion implantation, lithium-ion batteries.
Funding agency Grant number
Russian Science Foundation 19-79-10216
The study was supported by the Russian Science Foundation, project no. 19-79-10216.
Received: 07.02.2020
Revised: 16.04.2020
Accepted: 16.04.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 7, Pages 707–709
DOI: https://doi.org/10.1134/S1063785020070196
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. M. Lyadov, T. P. Gavrilova, S. M. Khantimerov, V. V. Bazarov, N. M. Suleimanov, V. A. Shustov, V. I. Nuzhdin, I. V. Yanilkin, A. I. Gumarov, I. A. Faizrakhmanov, L. R. Tagirov, “Formation of pores in thin germanium films under implantation by Ge$^{+}$ ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:14 (2020), 33–35; Tech. Phys. Lett., 46:7 (2020), 707–709
Citation in format AMSBIB
\Bibitem{LyaGavKha20}
\by N.~M.~Lyadov, T.~P.~Gavrilova, S.~M.~Khantimerov, V.~V.~Bazarov, N.~M.~Suleimanov, V.~A.~Shustov, V.~I.~Nuzhdin, I.~V.~Yanilkin, A.~I.~Gumarov, I.~A.~Faizrakhmanov, L.~R.~Tagirov
\paper Formation of pores in thin germanium films under implantation by Ge$^{+}$ ions
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 14
\pages 33--35
\mathnet{http://mi.mathnet.ru/pjtf5048}
\crossref{https://doi.org/10.21883/PJTF.2020.14.49664.18233}
\elib{https://elibrary.ru/item.asp?id=43870329}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 7
\pages 707--709
\crossref{https://doi.org/10.1134/S1063785020070196}
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