The effect of the growth temperature on the passivating properties of the Al$_{2}$O$_{3}$ films formed by atomic layer deposition on the CdHgTe surface

The electrophysical interface properties of the passivating Al$_{2}$O$_{3}$ coating grown by the method of plasma-induced atomic layer deposition at various temperatures on MBE $p$-CdHgTe ($x$ = 0.22) was experimentally studied by measuring the capacitance-voltage characteristics of MIS structures. It was found that, at a temperature of Al$_{2}$O$_{3}$ growth of 200$^{\circ}$С in MCT, the concentration of acceptors increases due to dissociation. At a temperature of 80$^{\circ}$С, the spread in the capacitance of the dielectric and the built-in charge increases. The optimum growth temperature of the passivating Al$_{2}$O$_{3}$ coating on CdHgTe lies in the range of 120–160$^{\circ}$С.