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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 16, Pages 16–18
DOI: https://doi.org/10.21883/PJTF.2020.16.49847.18293 (Mi pjtf5016) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Nanodimensional CoSiO films obtained by ion implantation on a ÑoSi$_{2}$ surface

S. B. Donaev

Tashkent State Technical University
Full-text PDF (172 kB) Citations (4)
DOI: https://doi.org/10.21883/PJTF.2020.16.49847.18293
Abstract: The morphology, composition, and electronic properties of the CoSiO film obtained on the ÑoSi$_{2}$/Si(111) surface by implantation of O$_2^+$ ions in combination with annealing were studied. The parameters of energy bands are determined and information on the density of state of electrons of the valence band and conduction band is obtained. In particular, it was shown that the band gap of this film is $\sim$2.4 eV.
Keywords: surface, ion implantation, annealing, bandgap width, morphology, nanofilm.
Received: 18.03.2020
Revised: 12.05.2020
Accepted: 14.05.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 8, Pages 796–798
DOI: https://doi.org/10.1134/S1063785020080192
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. B. Donaev, “Nanodimensional CoSiO films obtained by ion implantation on a ÑoSi$_{2}$ surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020), 16–18; Tech. Phys. Lett., 46:8 (2020), 796–798
Citation in format AMSBIB
\Bibitem{Don20}
\by S.~B.~Donaev
\paper Nanodimensional CoSiO films obtained by ion implantation on a ÑoSi$_{2}$ surface
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 16
\pages 16--18
\mathnet{http://mi.mathnet.ru/pjtf5016}
\crossref{https://doi.org/10.21883/PJTF.2020.16.49847.18293}
\elib{https://elibrary.ru/item.asp?id=44041078}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 8
\pages 796--798
\crossref{https://doi.org/10.1134/S1063785020080192}
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