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This article is cited in 2 scientific papers (total in 2 papers)
Properties of resistive structures based on gallium oxide polymorphic phases
V. M. Kalyginaa, V. I. Nikolaevb, A. V. Almaeva, A. V. Tsymbalova, Yu. S. Petrovaa, I. A. Pechnikovc, P. N. Butenkobc a Tomsk State University
b Perfect Crystals LLC, St. Petersburg, Russia
c Ioffe Institute, St. Petersburg
Abstract:
The effect of UV radiation and a strong electric field on the current–voltage characteristics of resistive structures based on polymorphic gallium oxide (Ga$_{2}$O$_{3}$) films is discussed. Ga$_{2}$O$_{3}$ films were deposited by the method of halide vapor phase epitaxy (HVPE) on smooth and patterned sapphire substrates with a baseline orientation (0001). $\alpha$-Ga$_{2}$O$_{3}$ films grow on smooth substrates, and gallium oxide films containing $\alpha$ and $\varepsilon$ phases grow on patterned ones. A switching effect was detected in the metal/Ga$_{2}$O$_{3}$/metal structures based on two-phase films. When exposed to radiation with $\lambda$ = 254 nm and a strong electric field, the structures pass from a low resistive state to a high resistive state.
Keywords:
gallium oxide, films, HVPE, polymorphism, ultraviolet, solar-blind structures.
Received: 16.04.2020 Revised: 30.05.2020 Accepted: 30.05.2020
Citation:
V. M. Kalygina, V. I. Nikolaev, A. V. Almaev, A. V. Tsymbalov, Yu. S. Petrova, I. A. Pechnikov, P. N. Butenko, “Properties of resistive structures based on gallium oxide polymorphic phases”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020), 33–36; Tech. Phys. Lett., 46:9 (2020), 867–870
Linking options:
https://www.mathnet.ru/eng/pjtf5007 https://www.mathnet.ru/eng/pjtf/v46/i17/p33
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