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This article is cited in 5 scientific papers (total in 5 papers)
A method for calculating operating characteristics of silicon heterojunction solar cells with arbitrary parameters of crystalline substrates
I. E. Panaiottia, E. I. Terukovbc, I. S. Shahraydb a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c R&D Center TFTE, St.-Petersburg
d Hevel Group, Moscow, Russia
Abstract:
The features of current processes in silicon heterojunction thin-film solar cells are investigated. The proposed model takes into account the ambipolar nature of the motion of charge carriers and allows one to calculate the operating characteristics for an arbitrary ratio between the diffusion length and the thickness of the crystalline substrate. A numerical method for estimating the rate of recombination losses on the surfaces of silicon wafers is described, based on a comparative analysis of the experimental values of short-circuit currents and open circuit voltages.
Keywords:
heterojunction solar cells, crystalline silicon substrates, surface recombination loss.
Received: 15.05.2020 Revised: 15.05.2020 Accepted: 19.05.2020
Citation:
I. E. Panaiotti, E. I. Terukov, I. S. Shahray, “A method for calculating operating characteristics of silicon heterojunction solar cells with arbitrary parameters of crystalline substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020), 3–5; Tech. Phys. Lett., 46:9 (2020), 835–837
Linking options:
https://www.mathnet.ru/eng/pjtf4999 https://www.mathnet.ru/eng/pjtf/v46/i17/p3
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