Isoperiodic Ga$_{x}$In$_{1-x}$Sb$_{y}$As$_{z}$P$_{1-y-z}$/InP heterostructures for planar $p$–$n$ photodiodes

Isoperiodic heterostructures Ga$_{x}$In$_{1-x}$Sb$_{y}$As$_{z}$P$_{1-y-z}$/InP at a 1.06 to 1.6 $\mu$m wavelength interval were grown by the method of floating-zone recrystallization with temperature gradient. Absolute spectral sensitivity of $\sim$0.59 A/W and a speed of $\sim$10 ns were achieved. Threshold sensitivity for the fabricated photodiodes was in the range 2 $\times$ 10$^{-10}$ to 5 $\times$ 10$^{-11}$ W with a signal-to-noise ratio of 10.