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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 20, Pages 7–10
DOI: https://doi.org/10.21883/PJTF.2020.20.50147.18255
(Mi pjtf4958)
 

Properties of films based on nanosize and submicrometer InSb particles passivated with CdS

M. I. Shishkin, Yu. V. Nikulin, E. S. Prikhozhdenko

Saratov State University
Abstract: In the InSb film fabricated by thermal evaporation on the CdS single crystal, growth of reflection in the infrared region similar to plasma resonance in the single crystals has observed. Raman spectra demonstrate that the ratio of amorphous and crystalline phases is approximately constant for InSb films on the CdS substrate, which is not typical for the InSb film on gallium gadolinium garnet. The current – voltage characteristics of the InSb film on CdS as well as the annealed layer of InSb (core)–CdS (shell) quantum dots are linear and become sensitive to illumination.
Keywords: semiconductor films, colloidal quantum dots, passivation, Raman spectroscopy.
Funding agency Grant number
Russian Foundation for Basic Research 18-37-00085 мол_а
The study was supported by the Russian Foundation for Basic Research under project no. 18-37-00085 mol_a.
Received: 20.02.2020
Revised: 10.07.2020
Accepted: 15.07.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 10, Pages 1000–1003
DOI: https://doi.org/10.1134/S1063785020100296
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. I. Shishkin, Yu. V. Nikulin, E. S. Prikhozhdenko, “Properties of films based on nanosize and submicrometer InSb particles passivated with CdS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:20 (2020), 7–10; Tech. Phys. Lett., 46:10 (2020), 1000–1003
Citation in format AMSBIB
\Bibitem{ShiNikPri20}
\by M.~I.~Shishkin, Yu.~V.~Nikulin, E.~S.~Prikhozhdenko
\paper Properties of films based on nanosize and submicrometer InSb particles passivated with CdS
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 20
\pages 7--10
\mathnet{http://mi.mathnet.ru/pjtf4958}
\crossref{https://doi.org/10.21883/PJTF.2020.20.50147.18255}
\elib{https://elibrary.ru/item.asp?id=44258634}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 10
\pages 1000--1003
\crossref{https://doi.org/10.1134/S1063785020100296}
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