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This article is cited in 4 scientific papers (total in 4 papers)
The influence of the conditions of getter formation in high-resistivity silicon on the characteristics of PIN photodiodes
I. B. Chistokhin, K. B. Fritzler Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
The influence of gettering conditions in high resistivity silicon during the PIN photodiode fabrication process on the reverse dark currents has been studied. It was demonstrated that the getter formation of backside substrate by a combination of phosphorus ion implantation and deposition of polysilicon film followed by phosphorus doping at the temperatures below 900$^\circ$C results in reduction of reverse dark current value and increasing of nonequilibrium carrier lifetime.
Keywords:
gettering, PIN photodiode, high resistivity silicon, dark currents.
Received: 06.07.2020 Revised: 20.07.2020 Accepted: 23.07.2020
Citation:
I. B. Chistokhin, K. B. Fritzler, “The influence of the conditions of getter formation in high-resistivity silicon on the characteristics of PIN photodiodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 11–13; Tech. Phys. Lett., 46:11 (2020), 1057–1059
Linking options:
https://www.mathnet.ru/eng/pjtf4945 https://www.mathnet.ru/eng/pjtf/v46/i21/p11
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Abstract page: | 52 | Full-text PDF : | 26 |
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