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Smoothing the surface of gallium antimonide
R. V. Levin, I. V. Fedorov, A. S. Vlasov, P. N. Brunkov, B. V. Pushnii Ioffe Institute, St. Petersburg
Abstract:
The results of studying the conditions for obtaining an atomically smooth surface of GaSb substrates are presented for the first time. It has been shown experimentally that it is possible to improve the surface quality of the samples by changing the annealing conditions. The smallest roughness of 1.3 nm was obtained for an annealing time of 16 min at a temperature of 650$^\circ$C in a flow of trimethylantimony and H$_2$.
Keywords:
annealing, substrates, GaSb, roughness, atomic force microscope, photoluminescence.
Received: 09.07.2019 Revised: 25.08.2019 Accepted: 03.09.2019
Citation:
R. V. Levin, I. V. Fedorov, A. S. Vlasov, P. N. Brunkov, B. V. Pushnii, “Smoothing the surface of gallium antimonide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020), 48–50; Tech. Phys. Lett., 46:12 (2020), 1203–1205
Linking options:
https://www.mathnet.ru/eng/pjtf4928 https://www.mathnet.ru/eng/pjtf/v46/i23/p48
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Abstract page: | 39 | Full-text PDF : | 17 |
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