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This article is cited in 1 scientific paper (total in 1 paper)
Influence of surface curvature on silicon sputtering by low-energy Ar ions
A. A. Sycheva Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
Abstract:
Molecular dynamics (MD) method was used to study 200 eV Ar ion impact on silicon nanoparticles of various sizes. Based on the MD simulations, the analysis of sputtering mechanisms and differences in the ion energy deposition which are determined by the curvature of the target surface, is performed in the paper.
Keywords:
physical sputtering, simulation, molecular dynamics, mechanism, surface curvature.
Received: 15.06.2020 Revised: 18.08.2020 Accepted: 19.08.2020
Citation:
A. A. Sycheva, “Influence of surface curvature on silicon sputtering by low-energy Ar ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020), 29–32; Tech. Phys. Lett., 46:12 (2020), 1184–1187
Linking options:
https://www.mathnet.ru/eng/pjtf4923 https://www.mathnet.ru/eng/pjtf/v46/i23/p29
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Abstract page: | 42 | Full-text PDF : | 21 |
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