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This article is cited in 1 scientific paper (total in 1 paper)
Electrical contacts to InP-based structures with a Zn-doped subcontact layer to $p$-InP
V. S. Epoletov, A. E. Marichev, B. V. Pushnii, R. A. Salii Ioffe Institute, St. Petersburg
Abstract:
The paper presents the results of using sub-contact layers with a band gap from 0.35 to 0.8 eV to obtain low-resistance electrical contacts to $p$-InP. An experimental dependence of the contact resistance on the band gap of the sub-contact material In$_{x}$Ga$_{1-x}$As is obtained.
Keywords:
electrical contact, subcontact layers, reducing resistance.
Received: 15.07.2020 Revised: 06.08.2020 Accepted: 07.08.2020
Citation:
V. S. Epoletov, A. E. Marichev, B. V. Pushnii, R. A. Salii, “Electrical contacts to InP-based structures with a Zn-doped subcontact layer to $p$-InP”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020), 13–14; Tech. Phys. Lett., 46:12 (2020), 1167–1169
Linking options:
https://www.mathnet.ru/eng/pjtf4918 https://www.mathnet.ru/eng/pjtf/v46/i23/p13
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