Using MoO$_{x}$/$p$-Si selective contact for evaluation of the degradation of a near-surface region of silicon

The possibility of evaluation the degree of damage to the near-surface layer of $p$-type silicon using a selective contact based on MoO$_{x}$/$p$-Si is shown. A strong sensitivity of the current-voltage characteristics to the states on the silicon surface formed during the deposition of silicon oxide by magnetron sputtering is demonstrated.