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This article is cited in 1 scientific paper (total in 1 paper)
Photovoltaic characteristics of LEDs with two in-series $p$–$n$ junctions
A. A. Sokolovskii, V. V. Moiseev Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Abstract:
In this work, we investigated the photovoltaic characteristics of high-power IR LEDs manufactured by OSRAM GmbH based on structures with two vertically stacked $p$–$n$ junctions. The spectral range of operation of PVTs based on LEDs with different radiation wavelengths was determined, and it was shown that the efficiency of photovoltaic conversion in them reaches more than 30% at a wavelength of 808 nm. The high (up to 2.6 V) output voltage of such converters allows them to be used for direct power supply of low-power electronic devices with optical radiation.
Keywords:
photovoltaic converter, open circuit voltage, maximum power voltage, short circuit current.
Received: 18.08.2020 Revised: 28.09.2020 Accepted: 28.09.2020
Citation:
A. A. Sokolovskii, V. V. Moiseev, “Photovoltaic characteristics of LEDs with two in-series $p$–$n$ junctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:1 (2021), 47–50; Tech. Phys. Lett., 47:1 (2021), 42–45
Linking options:
https://www.mathnet.ru/eng/pjtf4901 https://www.mathnet.ru/eng/pjtf/v47/i1/p47
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Abstract page: | 58 | Full-text PDF : | 13 |
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