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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 3, Pages 37–39
DOI: https://doi.org/10.21883/PJTF.2021.03.50574.18588 (Mi pjtf4872) 		 
AlSb/InAs heterostructures for microwave transistors

M. A. Sukhanova, A. K. Bakarovab, K. S. Zhuravlevab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Full-text PDF (1100 kB)
DOI: https://doi.org/10.21883/PJTF.2021.03.50574.18588
Abstract: Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.
Keywords: AlSb/InAs heterostructures, molecular beam epitaxy, high electron mobility transistor.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 075-15-2020-797
This study was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024).
Received: 16.10.2020
Revised: 25.10.2020
Accepted: 25.10.2020
English version:
Technical Physics Letters, 2021, Volume 47, Issue 2, Pages 139–142
DOI: https://doi.org/10.1134/S1063785021020127
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. A. Sukhanov, A. K. Bakarov, K. S. Zhuravlev, “AlSb/InAs heterostructures for microwave transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021), 37–39; Tech. Phys. Lett., 47:2 (2021), 139–142
Citation in format AMSBIB
\Bibitem{SukBakZhu21}
\by M.~A.~Sukhanov, A.~K.~Bakarov, K.~S.~Zhuravlev
\paper AlSb/InAs heterostructures for microwave transistors
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 3
\pages 37--39
\mathnet{http://mi.mathnet.ru/pjtf4872}
\crossref{https://doi.org/10.21883/PJTF.2021.03.50574.18588}
\elib{https://elibrary.ru/item.asp?id=44872061}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 2
\pages 139--142
\crossref{https://doi.org/10.1134/S1063785021020127}
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