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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 5, Pages 28–30
DOI: https://doi.org/10.21883/PJTF.2021.05.50673.18594 (Mi pjtf4841) 		 
The role of Coulomb interaction in the defect model of a Schottky barrier

S. Yu. Davydova, O. V. Posrednikb

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (91 kB)
DOI: https://doi.org/10.21883/PJTF.2021.05.50673.18594
Abstract: A model of a Schottky barrier is proposed in which dimers consisting of semiconductor defects and nearest metal atoms are present at the interface. Short-range Coulomb repulsion is included between defect electrons and metal atom electrons. Analytical expressions for the occupation numbers of atoms and defects and the Schottky barrier height are obtained.
Keywords: interface semiconductor defect, interface metal atoms, Coulomb repulsion, occupation numbers.
Received: 23.10.2020
Revised: 21.11.2020
Accepted: 22.11.2020
English version:
Technical Physics Letters, 2021, Volume 47, Issue 3, Pages 234–236
DOI: https://doi.org/10.1134/S1063785021030081
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. Yu. Davydov, O. V. Posrednik, “The role of Coulomb interaction in the defect model of a Schottky barrier”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021), 28–30; Tech. Phys. Lett., 47:3 (2021), 234–236
Citation in format AMSBIB
\Bibitem{DavPos21}
\by S.~Yu.~Davydov, O.~V.~Posrednik
\paper The role of Coulomb interaction in the defect model of a Schottky barrier
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 5
\pages 28--30
\mathnet{http://mi.mathnet.ru/pjtf4841}
\crossref{https://doi.org/10.21883/PJTF.2021.05.50673.18594}
\elib{https://elibrary.ru/item.asp?id=46301732}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 3
\pages 234--236
\crossref{https://doi.org/10.1134/S1063785021030081}
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