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This article is cited in 3 scientific papers (total in 3 papers)
Smoothing of polycrystalline AlN thin films with argon cluster ions
I. V. Nikolaeva, N. G. Korobeishchikova, M. A. Roenkoa, P. V. Geydta, V. I. Struninb a Novosibirsk State University
b Omsk State University
Abstract:
The possibility of surface modification of thin polycrystalline aluminum nitride films by bombardment with argon cluster ion beam is investigated. The processing was carried out with high- (105 eV/atom) and low-energy (10 eV/atom) cluster ions. Using the spectral function of roughness, a highly efficient smoothing of the surface of nanostructured thin films of aluminum nitride was demonstrated in a wide range of spatial frequencies ($\nu$ = 0.02–128 $\mu$m$^{-1}$) and at small etching depth ($<$ 100 nm).
Keywords:
cluster ion beam, thin films, aluminum nitride, surface smoothing.
Received: 01.09.2020 Revised: 28.09.2020 Accepted: 11.12.2020
Citation:
I. V. Nikolaev, N. G. Korobeishchikov, M. A. Roenko, P. V. Geydt, V. I. Strunin, “Smoothing of polycrystalline AlN thin films with argon cluster ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 44–47; Tech. Phys. Lett., 47:4 (2021), 301–304
Linking options:
https://www.mathnet.ru/eng/pjtf4832 https://www.mathnet.ru/eng/pjtf/v47/i6/p44
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