Increasing the efficiency of 520- to 540-nm laser radiation photovoltaic converters based on GaInP/GaAs heterostructures

Photovoltaic converters of 520- to 540-nm laser radiation based on GaInP/GaAs heterostructures have been studied. It is established that a decrease in the degree of GaInP layer ordering by introduction of antimony (Sb) atoms leads to a short-wave shift of the absorption edge with simultaneous growth in the open-circuit voltage. An increase in the total thickness of photoactive layers in heterostructures results in increasing spectral responsivity of radiation converters. The proposed optimization allows the efficiency of laser radiation photoconverters to be increased from 39.4 to 44.4%.