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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 7, Pages 49–51
DOI: https://doi.org/10.21883/PJTF.2021.07.50801.18599
(Mi pjtf4819)
 

This article is cited in 1 scientific paper (total in 1 paper)

The effect of porous silicon oxidation on electrochemical formation of porous silicon–indium nanocomposites

N. L. Grevtsova, E. B. Chubenkoa, V. P. Bondarenkoa, I. M. Gavrilinb, A. A. Dronovb, S. A. Gavrilovb

a Belarussian State University of Computer Science and Radioelectronic Engineering
b National Research University of Electronic Technology
Full-text PDF (444 kB) Citations (1)
Abstract: he oxidation of scaffold of porous silicon in air at 300$^\circ$C or an aqueous HNO$_3$ solution (50 vol%) is found to improve pore filling in electrochemical deposition of indium into it. Due to incomplete oxidation of the porous silicon scaffold, the peak in indium concentration shifts away from the surface, deeper into the porous layer. The greatest effect–the highest indium concentration in pores–is observed for porous silicon oxidized in the HNO$_3$ solution.
Keywords: porous silicon, indium, electrochemical deposition, oxidation, nanoparticles, nanothreads.
Funding agency Grant number
Russian Science Foundation 20-19-00720
This work was supported by the Russian Science Foundation, project no. 20-19-00720.
Received: 27.10.2020
Revised: 29.12.2020
Accepted: 29.12.2020
English version:
Technical Physics Letters, 2021, Volume 47, Issue 4, Pages 341–343
DOI: https://doi.org/10.1134/S1063785021040088
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. L. Grevtsov, E. B. Chubenko, V. P. Bondarenko, I. M. Gavrilin, A. A. Dronov, S. A. Gavrilov, “The effect of porous silicon oxidation on electrochemical formation of porous silicon–indium nanocomposites”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 49–51; Tech. Phys. Lett., 47:4 (2021), 341–343
Citation in format AMSBIB
\Bibitem{GreChuBon21}
\by N.~L.~Grevtsov, E.~B.~Chubenko, V.~P.~Bondarenko, I.~M.~Gavrilin, A.~A.~Dronov, S.~A.~Gavrilov
\paper The effect of porous silicon oxidation on electrochemical formation of porous silicon–indium nanocomposites
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 7
\pages 49--51
\mathnet{http://mi.mathnet.ru/pjtf4819}
\crossref{https://doi.org/10.21883/PJTF.2021.07.50801.18599}
\elib{https://elibrary.ru/item.asp?id=46318392}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 4
\pages 341--343
\crossref{https://doi.org/10.1134/S1063785021040088}
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  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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