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This article is cited in 3 scientific papers (total in 3 papers)
$\alpha$–$\beta$ phase transition in the impurity phase of a SiO$_2$ single crystal
M. U. Kalanov, A. V. Khugaev Institute of Nuclear Physics, Academy of Sciences of Uzbekistan, Tashkent
Abstract:
Thermal oxidation of a silicon single crystal in the temperature range of 293–1293 K was studied using high-temperature X-ray diffraction directly on the beam. An anomaly in the intensity and angular position of diffuse scattering from the surface of the single crystal was found. The anomaly is explained by the oxidation of the silicon surface according to the Dill Grove model, including the process of thermal oxidation and sublimation of the oxide layer depending on temperature. It was found that in the bulk of a single crystal (silicon medium) in this temperature range, there is $\alpha$–$\beta$ phase transition in the crystalline phase of silicon dioxide, similar to the $\alpha$–$\beta$ transition of quartz in the atmosphere.
Keywords:
single crystal, phase, phase transition, X-ray, diffraction, sublimation.
Received: 20.11.2020 Revised: 20.11.2020 Accepted: 21.12.2020
Citation:
M. U. Kalanov, A. V. Khugaev, “$\alpha$–$\beta$ phase transition in the impurity phase of a SiO$_2$ single crystal”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 22–25; Tech. Phys. Lett., 47:5 (2021), 349–352
Linking options:
https://www.mathnet.ru/eng/pjtf4812 https://www.mathnet.ru/eng/pjtf/v47/i7/p22
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