Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 7, Pages 13–16
DOI: https://doi.org/10.21883/PJTF.2021.07.50792.18630 (Mi pjtf4810) 		 
Substrates with diamond heat sink for epitaxial GaN growth

I. O. Mayborodaa, I. A. Chernykha, V. S. Sedovb, A. Altakhovb, A. A. Andreeva, Yu. V. Grishchenkoa, E. M. Kolobkovaa, A. K. Martyanovb, V. I. Konovb, M. L. Zanaveskina

a National Research Centre "Kurchatov Institute", Moscow
b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
Full-text PDF (833 kB)
DOI: https://doi.org/10.21883/PJTF.2021.07.50792.18630
Abstract: Silicon wafers with a polycrystalline diamond heat sink have been fabricated; the silicon and diamond layers have thicknesses of 234 nm and 250 $\mu$m, respectively. The diamond thermal conductivity is 1290 $\pm$ 190 W/(m K). Nitride heterostructures with two-dimensional electron gas have been grown on silicon substrates with a polycrystalline diamond heat sink using ammoniacal molecular-beam epitaxy. The electron mobility in the two-dimensional electron gas and its sheet resistance are 1600 cm$^2$/(V s) and 300 $\Omega/\square$, respectively.
Keywords: high electron mobility transistor, nitride heterostructure, gallium nitride, silicon, diamond.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation
This study was supported by the National Research Center “Kurchatov Institute.”
Received: 25.11.2020
Revised: 16.12.2020
Accepted: 17.12.2020
English version:
Technical Physics Letters, 2021, Volume 47, Issue 5, Pages 353–356
DOI: https://doi.org/10.1134/S1063785021040118
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. O. Mayboroda, I. A. Chernykh, V. S. Sedov, A. Altakhov, A. A. Andreev, Yu. V. Grishchenko, E. M. Kolobkova, A. K. Martyanov, V. I. Konov, M. L. Zanaveskin, “Substrates with diamond heat sink for epitaxial GaN growth”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 13–16; Tech. Phys. Lett., 47:5 (2021), 353–356
Citation in format AMSBIB
\Bibitem{MayCheSed21}
\by I.~O.~Mayboroda, I.~A.~Chernykh, V.~S.~Sedov, A.~Altakhov, A.~A.~Andreev, Yu.~V.~Grishchenko, E.~M.~Kolobkova, A.~K.~Martyanov, V.~I.~Konov, M.~L.~Zanaveskin
\paper Substrates with diamond heat sink for epitaxial GaN growth
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 7
\pages 13--16
\mathnet{http://mi.mathnet.ru/pjtf4810}
\crossref{https://doi.org/10.21883/PJTF.2021.07.50792.18630}
\elib{https://elibrary.ru/item.asp?id=46318383}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 5
\pages 353--356
\crossref{https://doi.org/10.1134/S1063785021040118}
Linking options:
  • https://www.mathnet.ru/eng/pjtf4810
  • https://www.mathnet.ru/eng/pjtf/v47/i7/p13
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:88
    Full-text PDF :35
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024