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This article is cited in 3 scientific papers (total in 3 papers)
Pulse response characteristics of silicon photovoltaic converters irradiated with low-energy protons
N. M. Bogatova, L. R. Grigoryana, A. I. Kovalenkoa, M. S. Kovalenkoa, L. S. Luninb a Kuban State University, Krasnodar
b Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
Abstract:
The effect of irradiation with low-energy protons on the pulse characteristics of silicon photovoltaic structures is investigated. For measurements, bipolar rectangular voltage pulses with a constant amplitude of 10 mV and a frequency of 200 kHz and 1 MHz were used. It is shown that irradiation with protons with an energy of 180 keV and a dose of 10$^{15}$ cm$^{-2}$ creates a region with a high concentration of radiation defects in the SCR of the $n^+$–$p$ transition. Such elements can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.
Keywords:
photodiode, silicon, lifetime, proton.
Received: 23.10.2020 Revised: 17.12.2020 Accepted: 17.12.2020
Citation:
N. M. Bogatov, L. R. Grigoryan, A. I. Kovalenko, M. S. Kovalenko, L. S. Lunin, “Pulse response characteristics of silicon photovoltaic converters irradiated with low-energy protons”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 10–12; Tech. Phys. Lett., 47:4 (2021), 326–328
Linking options:
https://www.mathnet.ru/eng/pjtf4809 https://www.mathnet.ru/eng/pjtf/v47/i7/p10
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