The dependence of the growth rate and structure of III–V nanowires on the adatom collection area on the substrate surface

The dependence of the growth rate and structure of nanowires of III–V semiconductor compounds on the area of diffusion collection of adatoms on the substrate surface has been studied theoretically. An expression for the maximum growth rate of nanowires is derived. The reasons for its decrease in different technologies are analyzed. It is shown that the growth rate is proportional to the collection area and inversely proportional to the squared nanocrystal radius. It is demonstrated that autocatalytic GaAs nanowires expand and contract at large and small collection areas, respectively, and have a cubic structure in both cases. A wurtzite-type phase is formed at intermediate collection areas.