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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 14, Pages 26–29
DOI: https://doi.org/10.21883/PJTF.2021.14.51183.18766 (Mi pjtf4733) 		 
Gan-on-silicon growth features: controlled plastic deformation

I. S. Ezubchenko, M. Y. Chernykh, P. A. Perminov, Yu. V. Grishchenko, I. N. Trunkin, I. A. Chernykh, M. L. Zanaveskin

National Research Centre "Kurchatov Institute", Moscow
Full-text PDF (1523 kB)
DOI: https://doi.org/10.21883/PJTF.2021.14.51183.18766
Abstract: Gallium nitride heterostructures were grown on silicon substrates by metalorganic chemical vapor deposition. Plastic deformations of the substrate are observed that occurred during growth at temperatures of 930 – 975$^\circ$C due to effective accumulation of compressive stress in the film. A method is proposed for controlled plastic deformation of silicon by high-temperature annealing with simultaneous in situ growth of a SiN$_x$ layer after the heterostructure is grown. This approach makes it possible to simplify the optimization of architecture of gallium nitride heterostructures for various technological task.
Keywords: nitride heterostructure, metalorganic chemical vapour deposition, gallium nitride, silicon, plastic deformation.
Funding agency Grant number
National Research Centre "Kurchatov Institute" 1055
This study was supported by National Research Center “Kurchatov Institute”, order no. 1055 of July 2, 2020.
Received: 12.03.2021
Revised: 06.04.2021
Accepted: 20.04.2021
English version:
Technical Physics Letters, 2021, Volume 47, Issue 10, Pages 705–708
DOI: https://doi.org/10.1134/S1063785021070208
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. S. Ezubchenko, M. Y. Chernykh, P. A. Perminov, Yu. V. Grishchenko, I. N. Trunkin, I. A. Chernykh, M. L. Zanaveskin, “Gan-on-silicon growth features: controlled plastic deformation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 26–29; Tech. Phys. Lett., 47:10 (2021), 705–708
Citation in format AMSBIB
\Bibitem{EzuChePer21}
\by I.~S.~Ezubchenko, M.~Y.~Chernykh, P.~A.~Perminov, Yu.~V.~Grishchenko, I.~N.~Trunkin, I.~A.~Chernykh, M.~L.~Zanaveskin
\paper Gan-on-silicon growth features: controlled plastic deformation
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 14
\pages 26--29
\mathnet{http://mi.mathnet.ru/pjtf4733}
\crossref{https://doi.org/10.21883/PJTF.2021.14.51183.18766}
\elib{https://elibrary.ru/item.asp?id=46333468}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 10
\pages 705--708
\crossref{https://doi.org/10.1134/S1063785021070208}
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