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Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy
V. A. Vorontsov, D. A. Antonov, A. V. Kruglov, I. N. Antonov, V. E. Kotomina, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, D. O. Filatov, O. N. Gorshkov National Research Lobachevsky State University of Nizhny Novgorod
Abstract:
Resistive switching effect of separate dislocations in Ag/Ge/Si(001) memristor structures was demonstrated experimentally by Conductive Atomic Force Microscopy. Hysteresis loops typical for bipolar resistive switching were observed in the current-voltage curves of the dislocations due to formation and rapture of Ag filament in the Ge layer as a result of Ag$^+$ ion drift along the dislocation core.
Keywords:
resistive switching, memristor, Ge/Si heterostructures, dislocations, ion sputtering, conductive atomic force microscopy.
Received: 24.03.2021 Revised: 27.04.2021 Accepted: 30.04.2021
Citation:
V. A. Vorontsov, D. A. Antonov, A. V. Kruglov, I. N. Antonov, V. E. Kotomina, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, D. O. Filatov, O. N. Gorshkov, “Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 23–26
Linking options:
https://www.mathnet.ru/eng/pjtf4719 https://www.mathnet.ru/eng/pjtf/v47/i15/p23
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Abstract page: | 41 | Full-text PDF : | 15 |
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