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Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor
M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, Yu. A. Danilov Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
In this work, we demonstrate the possibility of using a diluted magnetic semiconductor GaAs:Fe as a ferromagnetic injector in a spin light-emitting diode based on a GaAs/InGaAs quantum well heterostructure. It is shown that in such a device it is possible to observe partially circularly polarized electroluminescence at room temperature.
Keywords:
spin light-emitting diodes, diluted magnetic semiconductors, A$^3$B$^5$ semiconductors, spin injection.
Received: 19.04.2021 Revised: 09.07.2021 Accepted: 13.07.2021
Citation:
M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, Yu. A. Danilov, “Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 38–41
Linking options:
https://www.mathnet.ru/eng/pjtf4654 https://www.mathnet.ru/eng/pjtf/v47/i20/p38
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Abstract page: | 58 | Full-text PDF : | 22 |
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