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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 20, Pages 3–6
DOI: https://doi.org/10.21883/PJTF.2021.20.51604.18911 (Mi pjtf4645) 		 
Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression

F. I. Zubova, M. V. Maksimova, N. V. Kryzhanovskayaab, È. I. Moiseevb, A. M. Nadtochiyb, A. S. Dragunovaab, S. A. Blokhinbc, A. A. Vorob'eva, A. M. Mozharova, S. A. Mintairovc, N. A. Kalyuzhnyyc, A. E. Zhukovb

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b National Research University "Higher School of Economics", St. Petersburg Branch
c Ioffe Institute, St. Petersburg
Full-text PDF (341 kB)
DOI: https://doi.org/10.21883/PJTF.2021.20.51604.18911
Abstract: The output power is studied under continuous-wave operation of microdisk lasers with InGaAs/GaAs quantum well-dots hybridly integrated with a silicon substrate with the epitaxial side down using the thermocompression bonding method. Owing a decrease in the thermal resistance and suppression of self-heating, an increase in the values of currents is observed at which the power is saturated and the lasing is quenched, as well as an increase in the peak power. In microdisks with a diameter of 19 $\mu$m, the highest output optical power in the continuous wave regime was 9.4 mW.
Keywords: microlaser, hybrid integration, quantum dots, continuous-wave mode.
Funding agency Grant number
Russian Science Foundation 18-12-00287
Ministry of Education and Science of the Russian Federation СП-2169.2021.1
A.M. Mozharov thanks the Grants Council of the President of the Russian Federation, SP-2169.2021.1. This research was carried out by means of a grant of the Russian Science Foundation, no. 18-12-00287, (https://rscf.ru/project/18-12-00287/). Optical studies was carried out within the framework of the the Basic Research Program of HSE University.
Received: 08.06.2021
Revised: 23.06.2021
Accepted: 23.06.2021
English version:
Technical Physics Letters, 2022
DOI: https://doi.org/10.1134/S1063785022030105
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: F. I. Zubov, M. V. Maksimov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, S. A. Blokhin, A. A. Vorob'ev, A. M. Mozharov, S. A. Mintairov, N. A. Kalyuzhnyy, A. E. Zhukov, “Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 3–6
Citation in format AMSBIB
\Bibitem{ZubMakKry21}
\by F.~I.~Zubov, M.~V.~Maksimov, N.~V.~Kryzhanovskaya, \`E.~I.~Moiseev, A.~M.~Nadtochiy, A.~S.~Dragunova, S.~A.~Blokhin, A.~A.~Vorob'ev, A.~M.~Mozharov, S.~A.~Mintairov, N.~A.~Kalyuzhnyy, A.~E.~Zhukov
\paper Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 20
\pages 3--6
\mathnet{http://mi.mathnet.ru/pjtf4645}
\crossref{https://doi.org/10.21883/PJTF.2021.20.51604.18911}
\elib{https://elibrary.ru/item.asp?id=46549360}
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