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Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes
N. A. Maleevab, A. G. Kuz'menkovc, M. M. Kulaginaa, A. P. Vasil'evc, S. A. Blokhinac, S. I. Troshkova, A. V. Nashchekina, M. A. Bobrova, A. A. Blokhina, K. O. Voropaevd, V. E. Bugrovb, V. M. Ustinovc a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
d JSC OKB-Planeta, Velikii Novgorod
Abstract:
Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam epitaxy. Fabricated APDs with sensitive area diameter of about 30 micron were passivated by SiN deposition and demonstrate avalanche breakdown voltage Vbr $\sim$70–80 V. At applied bias of 0.9 Vbr the dark current was $\sim$75–200 nA. The single-mode coupled APDs demonstrate responsivity at a gain of unity is high than 0.5A/W at 1550 nm.
Keywords:
avalanche photodiode, mesa structure, dark current.
Received: 28.06.2021 Revised: 28.06.2021 Accepted: 19.07.2021
Citation:
N. A. Maleev, A. G. Kuz'menkov, M. M. Kulagina, A. P. Vasil'ev, S. A. Blokhin, S. I. Troshkov, A. V. Nashchekin, M. A. Bobrov, A. A. Blokhin, K. O. Voropaev, V. E. Bugrov, V. M. Ustinov, “Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 36–38
Linking options:
https://www.mathnet.ru/eng/pjtf4640 https://www.mathnet.ru/eng/pjtf/v47/i21/p36
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