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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1987, Volume 13, Issue 7, Pages 385–388
(Mi pjtf452)
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New method for investigation of microheterogeneity of local centers in high-ohmic semiconductor-materials using the REM
A. V. Govorkov, È. M. Omel'yanovskii, A. Ya. Polyakov, V. I. Raihshtein, V. A. Fridman
Received: 28.10.1986
Citation:
A. V. Govorkov, È. M. Omel'yanovskii, A. Ya. Polyakov, V. I. Raihshtein, V. A. Fridman, “New method for investigation of microheterogeneity of local centers in high-ohmic semiconductor-materials using the REM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:7 (1987), 385–388
Linking options:
https://www.mathnet.ru/eng/pjtf452 https://www.mathnet.ru/eng/pjtf/v13/i7/p385
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Abstract page: | 35 | Full-text PDF : | 15 |
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