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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1992, Volume 18, Issue 15, Pages 60–63 (Mi pjtf4411)  
SWITCHING OF CONDUCTIVITY WITH MEMORY ELEMENTS IN SILICON MDS-STRUCTURES WITH SAMARIUM FLUORIDE FILMS

V. A. Rozhkov, N. N. Romanenko
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Document Type: Article
Language: Russian
Citation: V. A. Rozhkov, N. N. Romanenko, “SWITCHING OF CONDUCTIVITY WITH MEMORY ELEMENTS IN SILICON MDS-STRUCTURES WITH SAMARIUM FLUORIDE FILMS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:15 (1992), 60–63
Citation in format AMSBIB
\Bibitem{1}
\by V.~A.~Rozhkov, N.~N.~Romanenko
\paper SWITCHING OF CONDUCTIVITY WITH MEMORY ELEMENTS IN SILICON MDS-STRUCTURES
WITH SAMARIUM FLUORIDE FILMS
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 1992
\vol 18
\issue 15
\pages 60--63
\mathnet{http://mi.mathnet.ru/pjtf4411}
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  • https://www.mathnet.ru/eng/pjtf/v18/i15/p60
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