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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1992, Volume 18, Issue 15, Pages 46–49 (Mi pjtf4408)  
DEVELOPMENT OF SURFACE-DEFECTS UNDER HIGH-VACUUM PLASMA SILICON ETCHING

R. K. Yafarov, S. T. Mevlyut, S. A. Terentev
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Document Type: Article
Language: Russian
Citation: R. K. Yafarov, S. T. Mevlyut, S. A. Terentev, “DEVELOPMENT OF SURFACE-DEFECTS UNDER HIGH-VACUUM PLASMA SILICON ETCHING”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:15 (1992), 46–49
Citation in format AMSBIB
\Bibitem{1}
\by R.~K.~Yafarov, S.~T.~Mevlyut, S.~A.~Terentev
\paper DEVELOPMENT OF SURFACE-DEFECTS UNDER HIGH-VACUUM PLASMA SILICON ETCHING
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 1992
\vol 18
\issue 15
\pages 46--49
\mathnet{http://mi.mathnet.ru/pjtf4408}
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  • https://www.mathnet.ru/eng/pjtf/v18/i15/p46
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