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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1986, Volume 12, Issue 3, Pages 175–179 (Mi pjtf42)  
Raman measurement of the refractive silicon index during pulsed laser annealing

G. M. Gusakov, A. A. Komarnitskiĭ, S. S. Sarkisyan
Full-text PDF (417 kB)
Received: 14.10.1985
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. M. Gusakov, A. A. Komarnitskiǐ, S. S. Sarkisyan, “Raman measurement of the refractive silicon index during pulsed laser annealing”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:3 (1986), 175–179
Citation in format AMSBIB
\Bibitem{GusKomSar86}
\by G.~M.~Gusakov, A.~A.~Komarnitski{\v\i}, S.~S.~Sarkisyan
\paper Raman measurement of the refractive silicon index during pulsed laser annealing
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 1986
\vol 12
\issue 3
\pages 175--179
\mathnet{http://mi.mathnet.ru/pjtf42}
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