Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pisma v Zhurnal Tekhnicheskoi Fiziki, 1987, Volume 13, Issue 2, Pages 105–109 (Mi pjtf388)  
This article is cited in 1 scientific paper (total in 1 paper)

Electron-paramagnetic-res of $Si-H$ centers in silicon

Yu. V. Gorelkinskii, N. N. Nevinnii
Full-text PDF (457 kB) Citations (1)
Received: 12.08.1986
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. V. Gorelkinskii, N. N. Nevinnii, “Electron-paramagnetic-res of $Si-H$ centers in silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:2 (1987), 105–109
Citation in format AMSBIB
\Bibitem{GorNev87}
\by Yu.~V.~Gorelkinskii, N.~N.~Nevinnii
\paper Electron-paramagnetic-res of $Si-H$ centers in silicon
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 1987
\vol 13
\issue 2
\pages 105--109
\mathnet{http://mi.mathnet.ru/pjtf388}
Linking options:
  • https://www.mathnet.ru/eng/pjtf388
  • https://www.mathnet.ru/eng/pjtf/v13/i2/p105
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:43
    Full-text PDF :16
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024