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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1989, Volume 15, Issue 12, Pages 50–52
(Mi pjtf2737)
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CRYSTALLIZATION OF SILICON-CARBIDE MONOCRYSTAL LAYERS ON SILICON AT
1050-1250-DEGREES-C
I. M. Baranov, N. A. Belov, V. A. Dmitriev, N. G. Ivanova, T. S. Kondrateva, I. P. Nikitina, V. E. Chelnokov, V. F. Shatalov, R. N. Erlikh
Citation:
I. M. Baranov, N. A. Belov, V. A. Dmitriev, N. G. Ivanova, T. S. Kondrateva, I. P. Nikitina, V. E. Chelnokov, V. F. Shatalov, R. N. Erlikh, “CRYSTALLIZATION OF SILICON-CARBIDE MONOCRYSTAL LAYERS ON SILICON AT
1050-1250-DEGREES-C”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:12 (1989), 50–52
Linking options:
https://www.mathnet.ru/eng/pjtf2737 https://www.mathnet.ru/eng/pjtf/v15/i12/p50
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Statistics & downloads: |
Abstract page: | 34 | Full-text PDF : | 17 |
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