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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1988, Volume 14, Issue 9, Pages 806–809 (Mi pjtf2087)  
PARAMETERS OF ELECTRON HEAT-UP IN SIO2 SILICON LAYERS

A. P. Baraban, V. V. Bulavinov, P. P. Konorov
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Document Type: Article
Language: Russian
Citation: A. P. Baraban, V. V. Bulavinov, P. P. Konorov, “PARAMETERS OF ELECTRON HEAT-UP IN SIO2 SILICON LAYERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:9 (1988), 806–809
Citation in format AMSBIB
\Bibitem{1}
\by A.~P.~Baraban, V.~V.~Bulavinov, P.~P.~Konorov
\paper PARAMETERS OF ELECTRON HEAT-UP IN SIO2 SILICON LAYERS
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 1988
\vol 14
\issue 9
\pages 806--809
\mathnet{http://mi.mathnet.ru/pjtf2087}
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