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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1988, Volume 14, Issue 8, Pages 706–709
(Mi pjtf2061)
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This article is cited in 1 scientific paper (total in 1 paper)
AVALANCHE PHOTODETECTOR BASED ON METAL-RESISTIVE-LAYER SEMICONDUCTOR
STRUCTURES
A. G. Gasanov, V. M. Golovin, Z. Y. Sadygov, N. Y. Yusipov
Citation:
A. G. Gasanov, V. M. Golovin, Z. Y. Sadygov, N. Y. Yusipov, “AVALANCHE PHOTODETECTOR BASED ON METAL-RESISTIVE-LAYER SEMICONDUCTOR
STRUCTURES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988), 706–709
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https://www.mathnet.ru/eng/pjtf2061 https://www.mathnet.ru/eng/pjtf/v14/i8/p706
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Abstract page: | 73 | Full-text PDF : | 36 |
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